v ds = 20v i d = 6.5v esd protected : 2000v advanced trench process technology high density cell design for ultra low on-resistance specially designed for li ion battery packs use designed for battery switch applications unit o c note: 1. repetitive rating: pulse width limited by the maximum junction temperation 3. guaranteed by design; not subject to production testing 1 m-mos semiconductor sdn. bhd. 20v dual n-channel enhancement-mode mosfet r ds(on) , v gs @2.5v, i ds @5.5a = 32m ? r ds(on) , v gs @4.5v, i ds @6.5a = 24m ? features battery swicth, esd protected tssop-08 internal schematic diagram top view n-channel mosfet maximum ratings and thermal characteristics (t a = 25 o c unless otherwise noted) parameter symbol limit drain-source voltage v ds 20 v gate-source voltage v gs 12 continuous drain current i d 6.5 a pulsed drain current 1) i dm 25 w t a = 75 o c 0.96 operating junction and storage temperature range t j , t stg -55 to 150 maximum power dissipation t a = 25 o c p d 1.5 junction-to-ambient thermal resistance (pcb mounted) 2) r ja 50 2. 1-in 2 2oz cu pcb board january '06 rev 1 FMTS06N20ED 6.5a 20v dual die n-channel esd protected enhancement-mode mosfet
symbol min typ max unit ? dss 25 - - ? ds(on) 26.0 32.0 ? ds(on) 20.0 24.0 gs(th) 0.6 0.8 1 dss 1 ? gss 10 ? fs ? ? g 4.33 ? gs 1.05 ? gd 2.49 d(on) 354.67 r 873.33 d(off) 3606.7 f 2006.7 ? iss 561.4 ? oss 102 ? rss 62.5 s ? ? sd ?? note : ? dual n-channel enhancement-mode mosfet electrical characteristics parameter test condition static ????3???t
3??? gs 3e3??3 d 3e3??? ????3a???3????? gs 3e3??3 d 3e3? m : ????3a???3????? gs 3e3??3 d 3e3? ??3?????3??? ds 3e gs ?3 d 3e3??? ?3??3???3?3?? ds 3e3??3 gs 3e3? ??3? 3???t?? gs 3e3 3?? v, v ds = 0v
?3??????? ds 3e3???3 d 3e3? dynamic 3) ???3??3???? v ds = 10v, i d = 6a v gs = 4.5v ? ?????3???? ???3???? ?a3??? 3? ? v dd = 10v, i d = 1a, v gen = 4.5v r g = 6 : ?a3??3? ? ?a3??? 3? ? ?a3???3? ? 3??????? v ds = 10v, v gs = 0v f = 1.0 mhz a3???????3 ?? ??3???3??????? source-drain diode max. diode forward current ?3
?3???3 s 3e3???3 gs 3e3? pulse test: pulse width <= 300us, duty cycle<= 2% y?? 3o?3?? 3? f m t s 06n 2 0 e d 6. 5 a 2 0 v d ual d ie n-channel esd p r o t e c t ed enhancement-mode mosfet
3 0 v n - c h a n n e l e n h a n c e m e n t - m o d e m o s f e t v d s = 3 0 v r d s ( o n ) , v g s @ 1 0 v , i d s @ 5 . 8 a = 2 8 m w w w w r d s ( o n ) , v g s @ 4 . 5 v , i d s @ 5 a = 3 3 m w w w w r d s ( o n ) , v g s @ 2 . 5 v , i d s @ 5 a = 5 2 m w w w w
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m a x i m u m r a t i n g s a n d t h e r m a l c h a r a c t e r i s t i c s ( t a = 2 5 o c u n l e s s o t h e r w i s e n o t e d ) s y m b o l l i m i t u n i t v d s 3 0 v g s 1 2 i d 6 i d m 3 0 t a = 2 5 o c 2 . 0 t a = 7 5 o c 1 . 3 t j , t s t g - 5 5 t o 1 5 0 o c j u n c t i o n - t o - a m b i e n t t h e r m a l r e s i s t a n c e ( p c b m o u n t e d ) r q j a 6 2 . 5 o c / w n o t e : 1 . m a x i m u m d c c u r r e n t l i m i t e d b y t h e p a c k a g e 2 . 1 - i n 2 o z c u p c b b o a r d n o v e m b e r ' 0 5 r e v 2 1 o p e r a t i n g j u n c t i o n a n d s t o r a g e t e m p e r a t u r e r a n g e c o n t i n u o u s d r a i n c u r r e n t g a t e - s o u r c e v o l t a g e m a x i m u m p o w e r d i s s i p a t i o n n - c h a n n e l m o s f e t p a r a m e t e r v a w d r a i n - s o u r c e v o l t a g e p d p u l s e d d r a i n c u r r e n t t o p v i e w i n t e r n a l s c h e m a t i c d i a g r a m s o t - 2 3 g a t e d r a i n s o u r c e 1 ) 2 ) 2 1 ) 2 ) fmt06n30 6.0a 30v n-channel enhancement-mode mosfet
e l e c t r i c a l c h a r a c t e r i s t i c s p a r a m e t e r s y m b o l t e s t c o n d i t i o n m i n t y p m a x u n i t s t a t i c d r a i n - s o u r c e b r e a k d o w n v o l t a g e b v d s s v g s = 0 v , i d = 2 5 0 u a 3 0 - - v d r a i n - s o u r c e o n - s t a t e r e s i s t a n c e r d s ( o n ) v g s = 2 . 5 v , i d = 5 a 4 3 5 2 d r a i n - s o u r c e o n - s t a t e r e s i s t a n c e r d s ( o n ) v g s = 4 . 5 v , i d = 5 a 2 7 3 3 d r a i n - s o u r c e o n - s t a t e r e s i s t a n c e r d s ( o n ) v g s = 1 0 v , i d = 5 . 8 a 2 4 2 8 g a t e t h r e s h o l d v o l t a g e v g s ( t h ) v d s = v g s , i d = 2 5 0 u a 0 . 6 0 . 8 v z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s v d s = 2 5 v , v g s = 0 v 1 u a g a t e b o d y l e a k a g e i g s s v g s = + 2 0 v , v d s = 0 v + 1 0 0 n a g a t e r e s i s t a n c e r g 0 . 6 w f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = 1 5 v , i d = 1 5 a 7 1 3 s d y n a m i c t o t a l g a t e c h a r g e q g 5 g a t e - s o u r c e c h a r g e q g s 0 . 9 g a t e - d r a i n c h a r g e q g d 1 . 4 t u r n - o n d e l a y t i m e t d ( o n ) 8 . 1 t u r n - o n r i s e t i m e t r 9 . 9 5 t u r n - o f f d e l a y t i m e t d ( o f f ) 2 1 . 8 5 t u r n - o f f f a l l t i m e t f 5 . 3 5 i n p u t c a p a c i t a n c e c i s s 5 6 2 o u t p u t c a p a c i t a n c e c o s s 1 0 6 r e v e r s e t r a n s f e r c a p a c i t a n c e c r s s 7 5 s o u r c e - d r a i n d i o d e m a x . d i o d e f o r w a r d c u r r e n t i s 1 . 7 a d i o d e f o r w a r d v o l t a g e v s d i s = 1 a , v g s = 0 v 1 . 2 v n o t e : p u l s e t e s t : p u l s e w i d t h < = 3 0 0 u s , d u t y c y c l e < = 2 % n o v e m b e r ' 0 5 r e v 2 2 n-channel enhancement-mode mosfet v d s = 1 5 v , v g s = 0 v f = 1 . 0 m h z p f m w n c v d d = 1 5 v , r l = 2 . 2 w i d = 1 a , v g e n = 1 0 v r g = 3 w n s v d s = 1 0 v , i d = 6 a v g s = 6 . 9 v f m t 06n 3 0 6 .0 a 3 0 v n-channel enhancement-mode mosfet
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